Large–Signal Modeling of AlGaN/GaN HEMTs with Analytically Calculated Thermal Resistance

A large–signal model of AlGaN/GaN HEMTs grown on sapphire substrate with gate width Wg = 2 × 150 μm and gate length Lg = 250 nm is presented. The equivalent circuit model accurately describes the sub–threshold region and takes into account the self–heating effects. The thermal resistance has been calculated analytically. The DC, small–signal and large– signal behaviour are accurately described by the model.